Ir2110 Pin Diagram
2021年5月31日Download here: http://gg.gg/uszzq
*Ir2110 Pin Diagram Image
*Ir2110 Pin Diagram Tool
*Ir2110 Pin Diagram Pin
*Ir2110 Pin Diagram Unlabeled
IR2113-1 High And Low Side Driver, All High Voltage Pins on One Side, Separate Logic And Power Ground, Shut-down in a 14-pin Dip Package. Fully operational or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from to 20V Logic and power. The IR2110 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Operating supply voltage range for IR2110 is 10 to 20 volt and output current is 2.5A. IR2110 comes in 14 pin through-hole PDIP package and the 16-pin surface mount SOIC package. IR2110 Pin Configuration.Saturday, 7 January 2017Using the high low side driver IR2110 explanation and plenty of example circuits
In many situations, we need to use MOSFETs configured as high-side switches. Many a times we need to use MOSFETs configured as high-side and low-side switches. Such as in bridge circuits. In half-bridge circuits, we have 1 high-side MOSFET and 1 low-side MOSFET. In full-bridge circuits we have 2 high-side MOSFETs and 2 low-side MOSFETs. In such situations, there is a need to use high-side drive circuitry alongside low-side drive circuitry. The most common way of driving MOSFETs in such cases is to use high-low side MOSFET drivers. Undoubtedly, the most popular such driver chip is the IR2110. And in this article/tutorial, I will talk about the IR2110.You can download the IR2110 datasheet from the IR website. Here’s the download link:www.irf.com/product-info/datasheets/data/ir2110.pdfFirst let’s take a look at the block diagram and the pin assignments and pin definitions (also called lead assignments and lead definitions):
Fig. 1 - IR2110 block diagram (click on image to enlarge)
Fig. 2 - IR2110 Pin/Lead Assignments (click on image to enlarge)
Fig. 3 - IR2110 Pin/Lead Definitions (click on image to enlarge)Notice that the IR2110 comes in two packages – 14 pin through-hole PDIP package and the 16-pin surface mount SOIC package.
Now let’s talk about the different pins.
VCC is the low-side supply and should be between 10V and 20V. VDD is the logic supply to the IR2110. It can be between +3V to +20V (with reference to VSS). The actual voltage you choose to use depends on the voltage level of your input signals. Here’s the chart:
Fig. 4 - IR2110 Logic ’1’ Input Threshold vs VDD (click on image to enlarge)
It is common practice to use VDD = +5V. When VDD = +5V, the logic 1 input threshold is slightly higher than 3V. Thus when VDD = +5V, the IR2110 can be used to drive loads when input “1” is higher than 3 point something volts. This means that it can be used for almost all circuits, since most circuits tend to have around 5V outputs. When you’re using microcontrollers the output voltage will be higher than 4V (when the microcontroller has VDD = +5V, which is quite common). When you’re using SG3525 or TL494 or other PWM controller, you are probably going to have them powered off greater than 10V, meaning the outputs will be higher than 8V when high. So, the IR2110 can be easily used.You may lower the VDD down to about 4V if you’re using a microcontroller or any chip that gives output of 3.3V (eg dsPIC33). While designing circuits with the IR2110, I had noticed that sometimes the circuit didn’t work properly when IR2110 VDD was selected as less than +4V. So, I do not recommend using VDD less than +4V.In most of my circuits, I do not have signal levels which have voltages less than 4V as high and so I use VDD = +5V.If for some reason, you have signals levels with logic “1” having lower than 3V, you will need a level converter / translator that will boost the voltage to acceptable limits. In such situations, I recommend boosting up to 4V or 5V and using IR2110 VDD = +5V.Now let’s talk about VSS and COM. VSS is the logic supply ground. COM is “low side return” – basically, low side drive ground connection. It seems that they are independent and you might think you could perhaps isolate the drive outputs and drive signals. However, you’d be wrong. While they are not internally connected, IR2110 is a non-isolated driver, meaning that VSS and COM should both be connected to ground.HIN and LIN are the logic inputs. A high signal to HIN means that you want to drive the high-side MOSFET, meaning a high output is provided on HO. A low signal to HIN means that you want to turn off the high-side MOSFET, meaning a low output is provided on HO. The output to HO – high or low – is not with respect to ground, but with respect to VS. We will soon see how a bootstrap circuitry (diode + capacitor) – utilizing VCC, VB and VS – is used to provide the floating supply to drive the MOSFET. VS is the high side floating supply return. When high, the level on HO is equal to the level on VB, with respect to VS. When low, the level on HO is equal to VS, with respect to VS, effectively zero.A high signal to LIN means that you want to drive the low-side MOSFET, meaning a high output is provided on LO. A low signal to LIN means that you want to turn off the low-side MOSFET, meaning a low output is provided on LO. The output on LO is with respect to ground. When high, the level on LO is equal to the level of VCC, with respect to VSS, effectively ground. When low, the level on LO is equal to the level on VSS, with respect to VSS, effectively zero.SD is used as shutdown control. When this pin is low, IR2110 is enabled – shutdown function is disabled. When this pin is high, the outputs are turned off, disabling the IR2110 drive.Now let’s take a look at the common IR2110 configuration for driving MOSFETs in both high and low side configurations – a half bridge stage.
Fig. 5 - Basic IR2110 circuit for driving half-bridge (click on image to enlarge)
D1, C1 and C2 along with the IR2110 form the bootstrap circuitry. When LIN = 1 and Q2 is on, C1 and C2 get charged to the level on VB, which is one diode drop below +VCC. When LIN = 0 and HIN = 1, this charge on the C1 and C2 is used to add the extra voltage – VB in this case – above the source level of Q1 to drive the Q1 in high-side configuration. A large enough capacitance must be chosen for C1 so that it can supply the charge required to keep Q1 on for all the time. C1 must also not be too large that charging is too slow and the voltage level does not rise sufficiently to keep the MOSFET on. The higher the on time, the higher the required capacitance. Thus, the lower the frequency, the higher the required capacitance for C1. The higher the duty cycle, the higher the required capacitance for C1. Yes, there are formulae available for calculating the capacitance. However, there are many parameters involved, some of which we may not know – for example, the capacitor leakage current. So, I just estimate the required capacitance. For low frequencies such as 50Hz, I use between 47µF and 68µF capacitance. For high frequencies like 30kHz to 50kHz, I use between 4.7µF and 22µF. Since we’re using an electrolytic capacitor, a ceramic capacitor should be used in parallel with this capacitor. The ceramic capacitor is not required if the bootstrap capacitor is tantalum.D2 and D3 discharge the gate capacitances of the MOSFET quickly, bypassing the gate resistors, reducing the turn off time. R1 and R2 are the gate current-limiting resistors.+MOSV can be up to a maximum of 500V.+VCC should be from a clean supply. You should use filter capacitors and decoupling capacitors from +VCC to ground for filtering.Now let’s look at a few example application circuits of the IR2110. Fig. 6 - IR2110 circuit for high-voltage half-bridge drive (click on image to enlarge)
Fig. 7 - IR2110 circuit for high-voltage full-bridge drive with independent switch control (click on image to enlarge)
In Fig. 7 we see the IR2110 being used to drive a full bridge. The functionality is simple and you should understand it by now. A common thing that is often done is that, HIN1 is tied/shorted to LIN2 and HIN2 is tied/shorted to LIN1, enabling the control of all 4 MOSFETs from 2 signal inputs, instead of 4 as shown below in Fig. 8.
Fig. 8 - IR2110 circuit for high-voltage full-bridge drive with tied switch control - control with 2 input signals (click on image to enlarge) Fig. 9 - Using the IR2110 as a single high-voltage high-side driver (click on image to enlarge)
In Fig. 9 we see the IR2110 being used as a single high-side driver. The circuit is simple enough and follows the same functionality described above. One thing to remember is that, since there is no low-side switch, there must a load connected from OUT to ground. Otherwise the bootstrap capacitors can not charge.
Fig. 10 - Using the IR2110 as a single low-side driver (click on image to enlarge) Fig. 11 - Using the IR2110 as a dual low-side driver (click on image to enlarge)
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If you’ve had failures with IR2110 and had driver after driver, MOSFET after MOSFET get damaged, burn and fail, I’m pretty sure that it’s due to you not using gate-to-source resistors, assuming of course that you designed the IR2110 driver stage properly. NEVER OMIT THE GATE-TO-SOURCE RESISTORS. If you’re curious, you can read about my experience with them here (I have also explained the reason that the resistors prevent damage):http://www.blogspot.com/2016/10/magic-of-knowledge.htmlFor further reading, you should go through this:
http://www.irf.com/technical-info/appnotes/an-978.pdfI have seen in many forums that people struggle with designing circuits with IR2110. I too had a lot of difficulty before I could confidently and consistently build successful driver circuits with IR2110. I have tried to explain the application and use of IR2110 thoroughly through explanation and plenty of examples and hope that it helps you in your endeavors with IR2110.
Newer PostOlder PostHomeIR2110IC DRIVER HIGH/LOW SIDE 14-DIPInternational Rectifier1.IR2113-1PBF.pdf (18 pages)High and Low Side, IndependentIr2110 Pin Diagram ImageNon-Inverting120ns2.5A12500V10 V ~ 20 V-40°C ~ 125°CThrough Hole14-DIP (0.300’, 7.62mm)Contains lead / RoHS non-compliant*IR2110Available stocksPart NumberQuantityIR2110IR5 532IR2110IOR5 510IR2110IR201IR2110130IR2110IOR1 000IR2110IR1 000IR21101 000IR2110STIR2110Infineon Technologies50 756IR2110IR996IR2110-1Infineon Technologies238IR2110-1PBFInfineon Technologies218IR2110-2Infineon Technologies1 353IR2110-2PBFInfineon Technologies318IR2110E4IR6 700IR2110E4SCBNXP24 000
*Current page: 1 of 18www.irf.comThe IR2110/IR2113 are high voltage, high speed power MOSFET andIGBT drivers with independent high and low side referenced output chan-nels. Proprietary HVIC and latch immune CMOS technologies enableruggedized monolithic construction. Logic inputs are compatible withstandard CMOS or LSTTL output, down to 3.3V logic. The outputdrivers feature a high pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Thefloating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichTypical Connection(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electricalconnections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.Fully operational to +500V or +600VdV/dt immuneUndervoltage lockout for both channelsSeparate logic supply range from 3.3V to 20VCMOS Schmitt-triggered inputs with pull-downMatched propagation delay for both channelsVHINSDCCSSHINLINDDCOMHOVCCSHIGH AND LOW SIDE DRIVERVOFFSETon/offIOUT(typ.)PackagesData Sheet No. PD60147 rev. U14-Lead PDIPup to 500V or 600V500V max.10 - 20VIR2110S/IR2113SLOAD1IR2110 Summary of contentsPage 1
.. Matched propagation delay for both channels Outputs in phase with inputs Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan- nels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction ..Page 2
.. Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35. Symbol V High side floating supply voltage (IR2110 High side floating supply offset voltage S ..Page 3
.. COM unless otherwise specified. The dynamic A SS Figure Min. Typ. Max. Units Test Conditions 7 — 120 8 — — 110 10 — — 17 (IR2110) — — — (IR2113) — — — = COM unless otherwise specified. The V SS Figure Min. Typ. Max. Units Test Conditions 12 9.5 — 13 — — — ..Page 4
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Functional Block Diagram HIN SD LIN Lead Definitions Symbol Description V Logic supply DD HIN Logic input for high side gate driver output (HO), in phase SD Logic input for shutdown LIN Logic input for low side gate driver output (LO), in phase ..Page 5
.. Lead Assignments 14 Lead PDIP IR2110/IR2113 14 Lead PDIP w/o lead 4 IR2110-1/IR2113-1 www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 16 Lead SOIC (Wide Body) 14 Lead PDIP w/o leads 4 & 5 IR2110-2/IR2113-2 Part Number IR2110S/ IR2113S 5 ..Page 6
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Figure 1. Input/Output Timing Diagram V =15V HIN LIN Figure 3. Switching Time Test Circuit 50 90% LO Figure 5. Shutdown Waveform Definitions 6 V =15V Figure 2. Floating Supply Voltage Transient Test Circuit HIN LIN 10 15V 500V/600V Figure 4. Switching Time Waveform Definition ..Page 7
.. Figure 7C. Turn-On Time vs. VDD Supply Voltage 250 200 Max. 150 Typ. 100 Supply Voltage ( Figure 8B. Turn-Off Time vs www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 250 200 Max. 150 Typ. 100 100 125 10 Figure 7B. Turn-On Time vs. V 250 200 150 Max. 100 Typ. ..Page 8
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 250 200 150 Max. 100 Typ -50 - Temperature (°C) Figure 9A. Shutdown Time vs. Temperature 250 200 . Max 150 100 Typ VDD Supply Voltage (V) Figure 9C. Shutdown Time vs. V 100 80 60 Max. 40 Typ Supply Voltage (V) BIAS Figure 10B. Turn-On Rise Time vs. Voltage ..Page 9
.. Figure 12B. Logic “1” Input Threshold vs. Voltage Min Logic Supply Voltage (V) DD Figure 13B. Logic “0” Input Threshold vs. Voltage www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 15.0 12.0 Min. Max 9.0 6.0 3.0 0 -50 -25 Figure 12A. Logic “1” Input Threshold vs. Tempera- 15.0 12.0 9.0 Max. Min. ..Page 10
.. Figure 15A. Low Level Output vs. Temperature 500 400 300 200 100 Max -50 -25 Figure 16A. Offset Supply Current vs. Temperature 500 400 300 Max. 200 Typ. 100 0 400 500 600 -50 IR2110 IR2113 Figure 17A 100 Temperature (° 100 Temperature (°C) - 100 Temperature (°C) Supply Current vs. Temperature BS www ..Page 11
.. V Fixed Supply Voltage (V) CC Figure 18B. V Supply Current vs. Voltage Logic Supply Voltage (V) DD Figure 19B. V Supply Current vs www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 625 500 375 Max. 250 Typ. 125 0 -50 - Figure 18A 100 Max. 20 Typ -50 -25 Figure 19A 100 Max ..Page 12
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Logic Supply Voltage (V) DD Figure 20B. Logic “1” Input Current vs Logic Supply Voltage (V) DD Figure 21B. Logic “0” Input Current vs. V 11.0 10.0 Max. 9.0 Typ. 8.0 7.0 Min. 6.0 -50 - Temperature (°C) Figure 23. V Undervoltage (-) vs. Temperature ..Page 13
.. Figure 26A. Output Source Current vs. Temperature 5.00 4.00 Typ. 3.00 Min. 2.00 1.00 0. -50 -25 Figure 27A. Output Sink Current vs. Temperature 150 125 100 1E+2 Figure 28. IR2110/IR2113 T (IRFBC20 100 Temperature (° 100 Temperature (°C) 320V 140V 10V 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) vs. Frequency J ..Page 14
.. Figure 30. IR2110/IR2113 T = 15V CC (IRFBC40) R 320V 140V 150 125 10V 100 1E+5 1E+6 1E+2 Figure 32. IR2110S/IR2113S T = 15V (IRFBC20 320V 140V 150 125 100 10V 1E+5 1E+6 1E+2 vs. Frequency Figure 34. IR2110S/IR2113S T = 15V (IRFBC40 320V 140V 1E+3 1E+4 1E+5 ..Ir2110 Pin Diagram ToolPage 15
.. Frequency (Hz) Figure 35. IR2110S/IR2113S T (IRFPE50 GATE 20.0 16.0 12.0 8.0 Typ. 4.0 0 Fixed Supply Voltage (V) CC Figure 37. Maximum V Positive Offset vs Supply Voltage CC www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 320V 140V 10V 0.0 -2.0 Typ. -4.0 -6.0 -8 ..Page 16Ir2110 Pin Diagram Pin
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Case Outlines 16 14-Lead PDIP 14-Lead PDIP w/o Lead 4 01-6010 01-3002 03 (MS-001AC) 01-6010 01-3008 02 (MS-001AC) www.irf.com ..Ir2110 Pin Diagram UnlabeledPage 17
.. Lead PDIP w/o Leads 4 & 5 www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 16-Lead SOIC (wide body) 01-6015 01-3010 02 01 6015 01-3014 03 (MS-013AA) 17 ..Page 18
.. PDIP IR2110-2 order IR2110-2PbF 14-Lead PDIP IR2113 order IR2113PbF 14-Lead PDIP IR2113-1 order IR2113-1PbF 14-Lead PDIP IR2113-2 order IR2113-2PbF 16-Lead SOIC IR2110S order IR2110SPbF 16-Lead SOIC IR2113S order IR2113SPbF IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 18 ..
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IR2113-1 High And Low Side Driver, All High Voltage Pins on One Side, Separate Logic And Power Ground, Shut-down in a 14-pin Dip Package. Fully operational or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from to 20V Undervoltage lockout for both channels 3.3V logic compatible Separate logic supply range from to 20V Logic and power. The IR2110 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Operating supply voltage range for IR2110 is 10 to 20 volt and output current is 2.5A. IR2110 comes in 14 pin through-hole PDIP package and the 16-pin surface mount SOIC package. IR2110 Pin Configuration.Saturday, 7 January 2017Using the high low side driver IR2110 explanation and plenty of example circuits
In many situations, we need to use MOSFETs configured as high-side switches. Many a times we need to use MOSFETs configured as high-side and low-side switches. Such as in bridge circuits. In half-bridge circuits, we have 1 high-side MOSFET and 1 low-side MOSFET. In full-bridge circuits we have 2 high-side MOSFETs and 2 low-side MOSFETs. In such situations, there is a need to use high-side drive circuitry alongside low-side drive circuitry. The most common way of driving MOSFETs in such cases is to use high-low side MOSFET drivers. Undoubtedly, the most popular such driver chip is the IR2110. And in this article/tutorial, I will talk about the IR2110.You can download the IR2110 datasheet from the IR website. Here’s the download link:www.irf.com/product-info/datasheets/data/ir2110.pdfFirst let’s take a look at the block diagram and the pin assignments and pin definitions (also called lead assignments and lead definitions):
Fig. 1 - IR2110 block diagram (click on image to enlarge)
Fig. 2 - IR2110 Pin/Lead Assignments (click on image to enlarge)
Fig. 3 - IR2110 Pin/Lead Definitions (click on image to enlarge)Notice that the IR2110 comes in two packages – 14 pin through-hole PDIP package and the 16-pin surface mount SOIC package.
Now let’s talk about the different pins.
VCC is the low-side supply and should be between 10V and 20V. VDD is the logic supply to the IR2110. It can be between +3V to +20V (with reference to VSS). The actual voltage you choose to use depends on the voltage level of your input signals. Here’s the chart:
Fig. 4 - IR2110 Logic ’1’ Input Threshold vs VDD (click on image to enlarge)
It is common practice to use VDD = +5V. When VDD = +5V, the logic 1 input threshold is slightly higher than 3V. Thus when VDD = +5V, the IR2110 can be used to drive loads when input “1” is higher than 3 point something volts. This means that it can be used for almost all circuits, since most circuits tend to have around 5V outputs. When you’re using microcontrollers the output voltage will be higher than 4V (when the microcontroller has VDD = +5V, which is quite common). When you’re using SG3525 or TL494 or other PWM controller, you are probably going to have them powered off greater than 10V, meaning the outputs will be higher than 8V when high. So, the IR2110 can be easily used.You may lower the VDD down to about 4V if you’re using a microcontroller or any chip that gives output of 3.3V (eg dsPIC33). While designing circuits with the IR2110, I had noticed that sometimes the circuit didn’t work properly when IR2110 VDD was selected as less than +4V. So, I do not recommend using VDD less than +4V.In most of my circuits, I do not have signal levels which have voltages less than 4V as high and so I use VDD = +5V.If for some reason, you have signals levels with logic “1” having lower than 3V, you will need a level converter / translator that will boost the voltage to acceptable limits. In such situations, I recommend boosting up to 4V or 5V and using IR2110 VDD = +5V.Now let’s talk about VSS and COM. VSS is the logic supply ground. COM is “low side return” – basically, low side drive ground connection. It seems that they are independent and you might think you could perhaps isolate the drive outputs and drive signals. However, you’d be wrong. While they are not internally connected, IR2110 is a non-isolated driver, meaning that VSS and COM should both be connected to ground.HIN and LIN are the logic inputs. A high signal to HIN means that you want to drive the high-side MOSFET, meaning a high output is provided on HO. A low signal to HIN means that you want to turn off the high-side MOSFET, meaning a low output is provided on HO. The output to HO – high or low – is not with respect to ground, but with respect to VS. We will soon see how a bootstrap circuitry (diode + capacitor) – utilizing VCC, VB and VS – is used to provide the floating supply to drive the MOSFET. VS is the high side floating supply return. When high, the level on HO is equal to the level on VB, with respect to VS. When low, the level on HO is equal to VS, with respect to VS, effectively zero.A high signal to LIN means that you want to drive the low-side MOSFET, meaning a high output is provided on LO. A low signal to LIN means that you want to turn off the low-side MOSFET, meaning a low output is provided on LO. The output on LO is with respect to ground. When high, the level on LO is equal to the level of VCC, with respect to VSS, effectively ground. When low, the level on LO is equal to the level on VSS, with respect to VSS, effectively zero.SD is used as shutdown control. When this pin is low, IR2110 is enabled – shutdown function is disabled. When this pin is high, the outputs are turned off, disabling the IR2110 drive.Now let’s take a look at the common IR2110 configuration for driving MOSFETs in both high and low side configurations – a half bridge stage.
Fig. 5 - Basic IR2110 circuit for driving half-bridge (click on image to enlarge)
D1, C1 and C2 along with the IR2110 form the bootstrap circuitry. When LIN = 1 and Q2 is on, C1 and C2 get charged to the level on VB, which is one diode drop below +VCC. When LIN = 0 and HIN = 1, this charge on the C1 and C2 is used to add the extra voltage – VB in this case – above the source level of Q1 to drive the Q1 in high-side configuration. A large enough capacitance must be chosen for C1 so that it can supply the charge required to keep Q1 on for all the time. C1 must also not be too large that charging is too slow and the voltage level does not rise sufficiently to keep the MOSFET on. The higher the on time, the higher the required capacitance. Thus, the lower the frequency, the higher the required capacitance for C1. The higher the duty cycle, the higher the required capacitance for C1. Yes, there are formulae available for calculating the capacitance. However, there are many parameters involved, some of which we may not know – for example, the capacitor leakage current. So, I just estimate the required capacitance. For low frequencies such as 50Hz, I use between 47µF and 68µF capacitance. For high frequencies like 30kHz to 50kHz, I use between 4.7µF and 22µF. Since we’re using an electrolytic capacitor, a ceramic capacitor should be used in parallel with this capacitor. The ceramic capacitor is not required if the bootstrap capacitor is tantalum.D2 and D3 discharge the gate capacitances of the MOSFET quickly, bypassing the gate resistors, reducing the turn off time. R1 and R2 are the gate current-limiting resistors.+MOSV can be up to a maximum of 500V.+VCC should be from a clean supply. You should use filter capacitors and decoupling capacitors from +VCC to ground for filtering.Now let’s look at a few example application circuits of the IR2110. Fig. 6 - IR2110 circuit for high-voltage half-bridge drive (click on image to enlarge)
Fig. 7 - IR2110 circuit for high-voltage full-bridge drive with independent switch control (click on image to enlarge)
In Fig. 7 we see the IR2110 being used to drive a full bridge. The functionality is simple and you should understand it by now. A common thing that is often done is that, HIN1 is tied/shorted to LIN2 and HIN2 is tied/shorted to LIN1, enabling the control of all 4 MOSFETs from 2 signal inputs, instead of 4 as shown below in Fig. 8.
Fig. 8 - IR2110 circuit for high-voltage full-bridge drive with tied switch control - control with 2 input signals (click on image to enlarge) Fig. 9 - Using the IR2110 as a single high-voltage high-side driver (click on image to enlarge)
In Fig. 9 we see the IR2110 being used as a single high-side driver. The circuit is simple enough and follows the same functionality described above. One thing to remember is that, since there is no low-side switch, there must a load connected from OUT to ground. Otherwise the bootstrap capacitors can not charge.
Fig. 10 - Using the IR2110 as a single low-side driver (click on image to enlarge) Fig. 11 - Using the IR2110 as a dual low-side driver (click on image to enlarge)
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If you’ve had failures with IR2110 and had driver after driver, MOSFET after MOSFET get damaged, burn and fail, I’m pretty sure that it’s due to you not using gate-to-source resistors, assuming of course that you designed the IR2110 driver stage properly. NEVER OMIT THE GATE-TO-SOURCE RESISTORS. If you’re curious, you can read about my experience with them here (I have also explained the reason that the resistors prevent damage):http://www.blogspot.com/2016/10/magic-of-knowledge.htmlFor further reading, you should go through this:
http://www.irf.com/technical-info/appnotes/an-978.pdfI have seen in many forums that people struggle with designing circuits with IR2110. I too had a lot of difficulty before I could confidently and consistently build successful driver circuits with IR2110. I have tried to explain the application and use of IR2110 thoroughly through explanation and plenty of examples and hope that it helps you in your endeavors with IR2110.
Newer PostOlder PostHomeIR2110IC DRIVER HIGH/LOW SIDE 14-DIPInternational Rectifier1.IR2113-1PBF.pdf (18 pages)High and Low Side, IndependentIr2110 Pin Diagram ImageNon-Inverting120ns2.5A12500V10 V ~ 20 V-40°C ~ 125°CThrough Hole14-DIP (0.300’, 7.62mm)Contains lead / RoHS non-compliant*IR2110Available stocksPart NumberQuantityIR2110IR5 532IR2110IOR5 510IR2110IR201IR2110130IR2110IOR1 000IR2110IR1 000IR21101 000IR2110STIR2110Infineon Technologies50 756IR2110IR996IR2110-1Infineon Technologies238IR2110-1PBFInfineon Technologies218IR2110-2Infineon Technologies1 353IR2110-2PBFInfineon Technologies318IR2110E4IR6 700IR2110E4SCBNXP24 000
*Current page: 1 of 18www.irf.comThe IR2110/IR2113 are high voltage, high speed power MOSFET andIGBT drivers with independent high and low side referenced output chan-nels. Proprietary HVIC and latch immune CMOS technologies enableruggedized monolithic construction. Logic inputs are compatible withstandard CMOS or LSTTL output, down to 3.3V logic. The outputdrivers feature a high pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Thefloating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration whichTypical Connection(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electricalconnections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.Fully operational to +500V or +600VdV/dt immuneUndervoltage lockout for both channelsSeparate logic supply range from 3.3V to 20VCMOS Schmitt-triggered inputs with pull-downMatched propagation delay for both channelsVHINSDCCSSHINLINDDCOMHOVCCSHIGH AND LOW SIDE DRIVERVOFFSETon/offIOUT(typ.)PackagesData Sheet No. PD60147 rev. U14-Lead PDIPup to 500V or 600V500V max.10 - 20VIR2110S/IR2113SLOAD1IR2110 Summary of contentsPage 1
.. Matched propagation delay for both channels Outputs in phase with inputs Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan- nels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction ..Page 2
.. Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35. Symbol V High side floating supply voltage (IR2110 High side floating supply offset voltage S ..Page 3
.. COM unless otherwise specified. The dynamic A SS Figure Min. Typ. Max. Units Test Conditions 7 — 120 8 — — 110 10 — — 17 (IR2110) — — — (IR2113) — — — = COM unless otherwise specified. The V SS Figure Min. Typ. Max. Units Test Conditions 12 9.5 — 13 — — — ..Page 4
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Functional Block Diagram HIN SD LIN Lead Definitions Symbol Description V Logic supply DD HIN Logic input for high side gate driver output (HO), in phase SD Logic input for shutdown LIN Logic input for low side gate driver output (LO), in phase ..Page 5
.. Lead Assignments 14 Lead PDIP IR2110/IR2113 14 Lead PDIP w/o lead 4 IR2110-1/IR2113-1 www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 16 Lead SOIC (Wide Body) 14 Lead PDIP w/o leads 4 & 5 IR2110-2/IR2113-2 Part Number IR2110S/ IR2113S 5 ..Page 6
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Figure 1. Input/Output Timing Diagram V =15V HIN LIN Figure 3. Switching Time Test Circuit 50 90% LO Figure 5. Shutdown Waveform Definitions 6 V =15V Figure 2. Floating Supply Voltage Transient Test Circuit HIN LIN 10 15V 500V/600V Figure 4. Switching Time Waveform Definition ..Page 7
.. Figure 7C. Turn-On Time vs. VDD Supply Voltage 250 200 Max. 150 Typ. 100 Supply Voltage ( Figure 8B. Turn-Off Time vs www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 250 200 Max. 150 Typ. 100 100 125 10 Figure 7B. Turn-On Time vs. V 250 200 150 Max. 100 Typ. ..Page 8
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 250 200 150 Max. 100 Typ -50 - Temperature (°C) Figure 9A. Shutdown Time vs. Temperature 250 200 . Max 150 100 Typ VDD Supply Voltage (V) Figure 9C. Shutdown Time vs. V 100 80 60 Max. 40 Typ Supply Voltage (V) BIAS Figure 10B. Turn-On Rise Time vs. Voltage ..Page 9
.. Figure 12B. Logic “1” Input Threshold vs. Voltage Min Logic Supply Voltage (V) DD Figure 13B. Logic “0” Input Threshold vs. Voltage www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 15.0 12.0 Min. Max 9.0 6.0 3.0 0 -50 -25 Figure 12A. Logic “1” Input Threshold vs. Tempera- 15.0 12.0 9.0 Max. Min. ..Page 10
.. Figure 15A. Low Level Output vs. Temperature 500 400 300 200 100 Max -50 -25 Figure 16A. Offset Supply Current vs. Temperature 500 400 300 Max. 200 Typ. 100 0 400 500 600 -50 IR2110 IR2113 Figure 17A 100 Temperature (° 100 Temperature (°C) - 100 Temperature (°C) Supply Current vs. Temperature BS www ..Page 11
.. V Fixed Supply Voltage (V) CC Figure 18B. V Supply Current vs. Voltage Logic Supply Voltage (V) DD Figure 19B. V Supply Current vs www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 625 500 375 Max. 250 Typ. 125 0 -50 - Figure 18A 100 Max. 20 Typ -50 -25 Figure 19A 100 Max ..Page 12
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Logic Supply Voltage (V) DD Figure 20B. Logic “1” Input Current vs Logic Supply Voltage (V) DD Figure 21B. Logic “0” Input Current vs. V 11.0 10.0 Max. 9.0 Typ. 8.0 7.0 Min. 6.0 -50 - Temperature (°C) Figure 23. V Undervoltage (-) vs. Temperature ..Page 13
.. Figure 26A. Output Source Current vs. Temperature 5.00 4.00 Typ. 3.00 Min. 2.00 1.00 0. -50 -25 Figure 27A. Output Sink Current vs. Temperature 150 125 100 1E+2 Figure 28. IR2110/IR2113 T (IRFBC20 100 Temperature (° 100 Temperature (°C) 320V 140V 10V 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) vs. Frequency J ..Page 14
.. Figure 30. IR2110/IR2113 T = 15V CC (IRFBC40) R 320V 140V 150 125 10V 100 1E+5 1E+6 1E+2 Figure 32. IR2110S/IR2113S T = 15V (IRFBC20 320V 140V 150 125 100 10V 1E+5 1E+6 1E+2 vs. Frequency Figure 34. IR2110S/IR2113S T = 15V (IRFBC40 320V 140V 1E+3 1E+4 1E+5 ..Ir2110 Pin Diagram ToolPage 15
.. Frequency (Hz) Figure 35. IR2110S/IR2113S T (IRFPE50 GATE 20.0 16.0 12.0 8.0 Typ. 4.0 0 Fixed Supply Voltage (V) CC Figure 37. Maximum V Positive Offset vs Supply Voltage CC www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 320V 140V 10V 0.0 -2.0 Typ. -4.0 -6.0 -8 ..Page 16Ir2110 Pin Diagram Pin
.. IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF Case Outlines 16 14-Lead PDIP 14-Lead PDIP w/o Lead 4 01-6010 01-3002 03 (MS-001AC) 01-6010 01-3008 02 (MS-001AC) www.irf.com ..Ir2110 Pin Diagram UnlabeledPage 17
.. Lead PDIP w/o Leads 4 & 5 www.irf.com IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF 16-Lead SOIC (wide body) 01-6015 01-3010 02 01 6015 01-3014 03 (MS-013AA) 17 ..Page 18
.. PDIP IR2110-2 order IR2110-2PbF 14-Lead PDIP IR2113 order IR2113PbF 14-Lead PDIP IR2113-1 order IR2113-1PbF 14-Lead PDIP IR2113-2 order IR2113-2PbF 16-Lead SOIC IR2110S order IR2110SPbF 16-Lead SOIC IR2113S order IR2113SPbF IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 18 ..
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